6 responses to “A Matter of Scale: Moore is Dead, Long Live Moore”

  1. GEARS

    You’ll probably hit the limit at atomic scales. IE: one atom, one bit. I have no idea how they’ll achieve that and I’ve heard thermal effects kill them at 5 nm. But it will end at some point, unless you can get quantum computing working in large scales

  2. paul hopwood

    But there’s also been lots of spin to keep the marketing hype going, I seem to remember in the late 1980’s early 1990’s the minimum feature size definition was changed to keep moores law on track.

    My mind boggles when I think of what IC engineers do & how they keep coming up with new ways to put more onto an IC & I’m always reminded of this when I read your posts and have to stretch my memory back to grad days.

    But, whilst we manage to cram Moore? Onto an IC the basic reason behind moores law is long gone. I seem to remember a good IEEE spectrum piece on it a few years back with an interview with Gordon Moore which should be online.

  3. Carmen

    I read a pretty interesting paper out of Taiwan not too long ago entitled “Design theory and fabrication process of 90nm unipolar-CMOS” in which the authors actually used leakage current to their advantage. A special “punchthrough NMOS” (PT NMOS) device was created and used to make CMOS-like logic circuits. To make this new device, the gate oxide was made slightly thicker than their conventional NMOS transistor so that the gate had less control over the transistor.

    For a standard inverter the conventional NMOS is placed on the “bottom” with the PT NMOS atop of it. The input is applied to their gates and the output is taken from the node between the two transistors. Obviously, the standard NMOS functions as expect but things get interesting when looking at the puncthrough device. When Vin = 1 the gate of the PT NMOS has just enough control over the device to halt the flow of puncthrough current and the standard NMOS pulls Vout low. When Vin = 0 the high VDS on the PT device forces a puncthrough current to flow pulling Vout high. Since puncthrough does not cause degeneration, the lifetime of the transistors shouldn’t be hampered.

    In my opinion, clever tactics like this will help with the continued scaling of transistors.

    http://tinyurl.com/3jrtq2o (should link to IEEE Xplore Abstract Page)

    1. Stanley Ma

      I wonder why they wouldn’t try to publish this in a more widely read forum than Silicon Nanoelectronics Workshop. IEDM is typically the place where big papers on device technology are published.